simple drive requirement bv dss 90v small package outline r ds(on) 240m surface mount device i d 1.7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w AP2330GN-HF parameter rating drain-source voltage 90 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 1.7 storage temperature range continuous drain current 3 , v gs @ 10v 1.3 pulsed drain current 1 6 total power dissipation 1.38 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for all commercial-industrial applications. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 90 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =1.5a - - 240 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.8 - 4 v g fs forward transconductance v ds =10v, i d =1.5a - 2.2 - s i dss drain-source leakage current v ds =72v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =1.5a - 8 13 nc q gs gate-source charge v ds =80v - 2.4 - nc q gd gate-drain ("miller") charge v gs =10v - 3.3 - nc t d(on) turn-on delay time 2 v ds =50v - 7 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 12.5 - ns t f fall time r d =50 ? -4- ns c iss input capacitance v gs =0v - 350 560 pf c oss output capacitance v ds =25v - 40 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =1.5a, v gs =0v, - 38 - ns q rr reverse recovery charge di/dt=100a/s - 65 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. AP2330GN-HF product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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